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Wednesday, 12 March 2014 14:25

Samsung launches 20nm 4Gb DDR3 memory chips

Samsung has started mass production of 4 Gb DDR3 memory chips in 20-nanometer manufacturing process.  According to the manufacturer, production of DRAM chips in fewer nanometer technology is more demanding job in relation to the NAND flash memory chips. While NAND in every cell requires only a transistor, 0DRAM memory must have both transistor and capacitor.

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